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| 2SC4196 Silicon NPN Epitaxial Application UHF Local oscillator Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4196 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 15 3 50 150 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Oscillating output voltage Note: Marking is "QI-". I EBO VCE(sat) hFE Cob fT VOSC Min 25 -- -- -- -- 50 -- 1.8 -- Typ -- -- -- -- -- -- 0.7 2.4 200 Max -- 0.3 10 1.0 0.3 180 1.0 -- -- pF GHz mV Unit V A A A V Test conditions I C = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 15 V, RBE = VEB = 3 V, IC = 0 I C = 20 mA, IB = 4 mA VCE = 5 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1MHz VCE = 5 V, IC = 20 mA VCC = 5 V, IC = 5 mA, f = 930 MHz 2 2SC4196 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 200 VCE = 5 V Pulse 160 100 120 80 50 40 0 0 100 150 50 Ambient Temperature Ta (C) 1 10 20 2 5 Collector Current IC (mA) 50 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 4 Gain Bandwidth Product fT (GHz) VCE = 5 V Pulse 3 1.1 1.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 0.9 2 0.8 1 0.7 0 1 10 20 2 5 Collector Current IC (mA) 50 0.6 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 3 2SC4196 Oscillating Output Voltage vs. Supply Voltage Oscillating Output Voltage Vosc (mV) Oscillating Output Voltage Vosc (mV) 1,000 500 f = 930 MHz IC = 8 mA 5 3 1,000 500 f = 930 MHz VCC = 8 V 5 3 Oscillating Output Voltage vs. Collector Current 200 100 50 200 100 50 20 10 0 6 8 2 4 Supply Voltage VCC (V) 10 20 10 0.5 5 10 1.0 2 Collector Current IC (mA) 20 4 2SC4196 S Parameters (Emitter Common) Test condition VCE = 5 V, 100 MHz to 1000 MHz (100 MHz STEP), ZO = 50 IC = 5 mA IC = 10 mA S11-Frequency 0.8 0.6 0.4 3 0.2 4 5 10 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 10 S21-Frequency 1.5 2 90 120 Scale : 4/div 60 1 150 30 -10 180 0 -0.2 -5 -4 -0.4 -2 -0.6 -0.8 -1 -1.5 -3 -150 -30 -120 -90 -60 S12-Frequency 90 120 Scale : 0.04/div 60 0.4 0.6 S22-Frequency 0.8 1 1.5 2 3 150 30 0.2 4 5 10 180 0 0 0.2 0.4 0.6 0.8 1 1.5 2 3 45 10 -10 -0.2 -150 -30 -0.4 -120 -90 -60 -2 -0.6 -0.8 -1 -1.5 -5 -4 -3 5 2SC4196 S Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.718 0.549 0.439 0.381 0.351 0.340 0.337 0.337 0.343 0.359 ANG. -44.8 -78.8 -102.0 -120.8 -135.5 -148.2 -157.8 -165.2 -173.1 -177.9 S21 MAG. 12.498 9.123 6.788 5.348 4.396 3.732 3.240 2.875 2.575 2.355 ANG. 144.9 122.0 108.4 99.3 92.4 86.7 81.7 77.3 73.4 70.0 S12 MAG. 0.026 0.042 0.051 0.060 0.068 0.076 0.085 0.094 0.103 0.112 ANG. 68.8 59.3 57.6 58.5 60.6 62.5 64.3 66.0 67.3 68.4 S22 MAG. 0.895 0.756 0.671 0.626 0.600 0.582 0.569 0.558 0.547 0.538 ANG. -14.6 -20.3 -21.3 -21.5 -21.8 -22.5 -23.3 -24.4 -25.8 -27.2 Test Condition VCE = 5 V, IC = 10 mA, ZO = 50 Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 S11 MAG. 0.553 0.401 0.337 0.314 0.313 0.314 0.327 0.335 0.349 0.354 ANG. -65.2 -103.4 -127.4 -143.9 -155.7 -165.5 -172.2 -177.7 176.8 172.8 S21 MAG. 17.540 11.066 7.723 5.939 4.816 4.052 3.496 3.090 2.753 2.515 ANG. 133.2 111.3 99.9 92.5 86.7 81.8 77.6 73.8 70.1 67.0 S12 MAG. 0.022 0.033 0.043 0.052 0.063 0.073 0.083 0.093 0.103 0.113 ANG. 64.8 61.3 63.9 66.3 68.6 70.1 71.4 72.4 73.0 74.0 S22 MAG. 0.809 0.659 0.598 0.570 0.555 0.545 0.536 0.530 0.523 0.516 ANG. -18.0 -20.0 -18.6 -18.1 -18.2 -18.9 -19.9 -21.0 -22.4 -24.0 6 2SC4196 Y Parameters (Emitter Common) Test Condition VCE = 5 V, IC = 5 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 3.035 6.463 10.768 15.089 18.776 22.098 24.568 26.291 28.112 29.685 IMAG. 5.491 10.003 12.356 13.186 12.837 11.913 10.731 9.416 7.683 6.751 Yfe (mS) REAL 152.256 131.145 103.025 77.334 55.039 37.290 22.802 11.686 2.225 -3.931 IMAG. -40.168 -71.318 -90.187 -98.666 -99.977 -98.247 -93.799 -88.266 -82.972 -78.720 Yre (mS) REAL -0.005 -0.015 -0.036 -0.065 -0.090 -0.128 -0.163 -0.193 -0.260 -0.291 IMAG. -0.334 -0.679 -1.034 -1.397 -1.767 -2.134 -2.515 -2.890 -3.305 -3.746 Yoe (mS) REAL 0.048 0.100 0.191 0.232 0.270 0.347 0.417 0.516 0.614 0.629 IMAG. 0.613 1.238 1.804 2.386 2.947 3.555 4.133 4.703 5.354 5.908 Test Condition VCE = 5 V, IC = 10 mA Freq. (MHz) 100 200 300 400 500 600 700 800 900 1000 Yie (mS) REAL 5.903 11.583 16.546 20.055 22.491 24.417 26.086 27.193 28.543 28.955 IMAG. 7.347 10.820 10.993 10.038 8.943 7.556 6.620 5.569 4.340 3.253 Yfe (mS) REAL 243.307 168.225 103.210 61.965 35.421 16.762 5.096 -3.874 -11.095 -15.953 IMAG. -103.091 -150.806 -155.623 -145.393 -131.365 -118.513 -107.291 -97.359 -88.952 -81.466 Yre (mS) REAL -0.008 -0.022 -0.045 -0.074 -0.093 -0.133 -0.155 -0.185 -0.248 -0.270 IMAG. -0.338 -0.682 -1.041 -1.387 -1.766 -2.138 -2.531 -2.923 -3.349 -3.737 Yoe (mS) REAL 0.026 0.128 0.216 0.320 0.316 0.378 0.424 0.469 0.563 0.650 IMAG. 0.591 1.254 1.797 2.394 2.917 3.544 4.086 4.659 5.307 5.861 7 2SC4196 VOSC Test Circuit Vosc Test Circuit L3 Ferrite Bead D.U.T. 1n VCC 470 9p L1 47 k 1n VT 1.2 p L2 ISV188 Unit R : C:F 330 2.2 n 6.8 k 1n VBB Vosc Output 15 10 5 L2 : 0.8 mm Enameled Copper Wire. 10 Unit : mm 15 15 L1 : 0.8 mm Enameled Copper Wire. L3 : Inside dia 3 mm, 0.3 mm Enameled Copper Wire 10 Turns. 8 Unit: mm 0.65 0.10 3 - 0.4 + 0.05 - 0.16 - 0.06 + 0.10 1.5 0.15 + 0.2 - 0.6 0 - 0.1 0.95 0.95 1.9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK -- Conforms 0.011 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. This datasheet has been download from: www..com Datasheets for electronics components. |
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